Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact
Author:
Funder
Samsung
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b10746
Reference40 articles.
1. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
2. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
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4. Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement
5. 2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning
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