Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure-Reference-Cited by-同舟云学术

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Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Song Sungjoo,Kim Seung-Hwan,Kim Seung-Geun,Han Kyu-Hyun,Kim Hyung-jun,Yu Hyun-Yong

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference43 articles.

1. Graphene/MoS2 Hybrid technology for large-scale two-dimensional electronics;L Yu;Nano Letters,2014

2. Fermi-level pinning and charge neutrality level in germanium;A Dimoulas;Applied Physics Letters,2006

3. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States;G S Kim;ACS Nano,2018

4. Universal metal-interlayer-semiconductor contact modeling considering interface-state effect on contact resistivity degradation;J K Kim;IEEE Transactions on Electron Devices,2018

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