Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure-Reference-Cited by-同舟云学术

Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure

Published:2023-03 Issue: Volume:937 Page:168327
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Song Sungjoo,Kim Seung-Hwan,Kim Seung-Geun,Han Kyu-Hyun,Kim Hyung-jun^ORCID,Yu Hyun-Yong^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference46 articles.

1. Graphene/MoS2 Hybrid technology for large-scale two-dimensional electronics;Yu;Nano Lett.,2014

2. Fermi-level pinning and charge neutrality level in germanium;Dimoulas;Appl. Phys. Lett.,2006

3. Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal-induced gap States;Kim;ACS Nano,2018

4. Surface passivation of germanium using SF6 plasma to reduce source/drain contact resistance in germanium n-FET;Kim;IEEE Electron Device Lett.,2015

5. Universal metal-interlayer-semiconductor contact modeling considering interface-state effect on contact resistivity degradation;Kim;IEEE Trans. Electron Devices,2018

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