Application of AlAs‐GaAs superlattices to step‐index and graded‐index waveguide separate‐confinement heterostructure laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337103
Reference18 articles.
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4. Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature
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1. Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells;physica status solidi (b);2007-08
2. Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide;Journal of Applied Physics;1992-12-15
3. Analysis and optimization of quantum‐well thickness for GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum‐well lasers;Journal of Applied Physics;1992-12
4. Anomalous excitation‐intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure;Journal of Applied Physics;1989-03
5. Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering;Optics Letters;1988-12-01
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