Anomalous excitation‐intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342849
Reference21 articles.
1. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
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3. Bound and virtual bound states in semiconductor quantum wells
4. Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wells
5. Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
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2. Electron and hole states and optical transitions in a structure with three quantum wells;Journal of Applied Spectroscopy;1992-05
3. Optical nonlinear responses of a quantum well photodiode with a non‐ohmic contact;Applied Physics Letters;1992-04-06
4. Carrier nonresonant tunneling in asymmetric coupled double quantum wells;Superlattices and Microstructures;1992-01
5. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques;Journal of Applied Physics;1991-07-15
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