A fast avalanche Si diode with a 517 μm low-doped region
Author:
Affiliation:
1. Department of Applied Physics, Soreq NRC, Yavne 81800, Israel
2. Department of Physics, Technion, Haifa 32000, Israel
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0016228
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