Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2901214
Reference30 articles.
1. Charge trapping in ultrathin hafnium oxide
2. Trap creation in silicon dioxide produced by hot electrons
3. Making silicon nitride film a viable gate dielectric
4. Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures;Materials Research Express;2024-06-01
2. The impact of ultrathin Al2O3films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures;Journal of Physics D: Applied Physics;2016-08-30
3. Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy;Journal of Applied Physics;2013-04-07
4. Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy;Applied Physics Letters;2013-03-04
5. Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates;Journal of Applied Physics;2012-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3