Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1819994
Reference18 articles.
1. Application of HfSiON as a gate dielectric material
2. Effect of Hf metal predeposition on the properties of sputtered HfO2/Hf stacked gate dielectrics
3. High-κ gate dielectrics: Current status and materials properties considerations
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3. Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications;Applied Physics Letters;2007-02-05
4. Electrical characteristic enhancement of metal–oxide–semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface;Solid-State Electronics;2006-06
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