Strong in-plane optical anisotropy of asymmetric (001) quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2192150
Reference12 articles.
1. Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
2. Light-heavy hole mixing and in-plane optical anisotropy ofInP−AlxIn1−xAstype-II multiquantum wells
3. Hidden In-Plane Anisotropy of Interfaces in Zn(Mn)Se/BeTe Quantum Wells with a Type-II Band Alignment
4. Interface-related in-plane optical anisotropy inGaAs/AlxGa1−xAssingle-quantum-well structures studied by reflectance difference spectroscopy
5. Intrinsic optical anisotropy in zinc-blende semiconductor quantum wells
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1. In-Plane Optical Anisotropy of [001]-Oriented Asymmetrical Quantum Wells;Acta Physica Polonica A;2023-01
2. Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope;Journal of Nanoscience and Nanotechnology;2018-11-01
3. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells;Nanoscale Research Letters;2016-10-26
4. Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2016-07
5. Reflectance difference spectroscopy microscope for circular defects on InN films;Optics Express;2016-06-24
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