Light-heavy hole mixing and in-plane optical anisotropy ofInP−AlxIn1−xAstype-II multiquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.7265/fulltext
Reference22 articles.
1. Fine structure of heavy excitons in GaAs/AlAs superlattices
2. Investigations of giant `forbidden' optical anisotropy in GaInAs - InP quantum well structures
3. Microscopic Reflection Difference Spectroscopy on Semiconductor Nanostructures
4. Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential
5. Giant electropleochroism in GaAs-(Al,Ga)As heterostructures: The quantum-well Pockels effect
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1. Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity;Journal of Alloys and Compounds;2018-03
2. In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces;Nanoscale Research Letters;2013-06-25
3. Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry;Journal of Applied Physics;2009-05-15
4. Optical absorption of polarized light in InAs/GaSb quantum wells;Semiconductor Science and Technology;2008-11-21
5. Effect of nonrelativistic interface Hamiltonian on optical transitions in broken-gap heterostructures;Physical Review B;2008-03-13
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