Interface-related in-plane optical anisotropy inGaAs/AlxGa1−xAssingle-quantum-well structures studied by reflectance difference spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.195321/fulltext
Reference25 articles.
1. Heavy-light hole mixing at zinc-blende (001) interfaces under normal incidence
2. Analytical Envelope-Function Theory of Interface Band Mixing
3. Anticrossing and coupling of light-hole and heavy-hole states in (001)GaAs/AlxGa1−xAsheterostructures
4. Giant electropleochroism in GaAs-(Al,Ga)As heterostructures: The quantum-well Pockels effect
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