The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy-Reference-Cited by-同舟云学术

The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy

Published:2014-05-05 Issue:18 Volume:104 Page:182103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suski T.,Schulz T.,Albrecht M.,Wang X. Q.,Gorczyca I.,Skrobas K.,Christensen N. E.,Svane A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4875558

Reference24 articles.

1. Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

2. Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

3. Photoluminescence and pressure effects in short period InN/nGaN superlattices

4. Density Functional Theory (DFT) Simulations and Polarization Analysis of the Electric Field in InN/GaN Multiple Quantum Wells (MQWs)

5. Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

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