A novel quantum wire formed by lateralp–n–pjunctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353225
Reference12 articles.
1. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
2. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
3. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
4. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
5. Lateralp‐njunctions and quantum wires formed by quasi two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces
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1. Numerical investigation of quantum wires in bevel-etched heterostructures;Semiconductor Science and Technology;2007-08-06
2. Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping;Semiconductor Science and Technology;2002-05-24
3. A versatile impedance boundary method of moments computational technique for solving the one-dimensional Schrodinger equation with application to quantum well and quantum wire problems;IEEE Journal of Quantum Electronics;1998-07
4. Fabrication of quantum wires in thermally etched V-grooves by molecular beam epitaxy;Semiconductor Science and Technology;1997-08-01
5. Design of gate‐confined quantum‐dot structures in the few‐electron regime;Journal of Applied Physics;1995-07-15
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