Lateralp‐njunctions and quantum wires formed by quasi two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108386
Reference11 articles.
1. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
2. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
3. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
4. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
5. Quantum wires in InGaAs/InP fabricated by holographic photolithography
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1. Numerical investigation of quantum wires in bevel-etched heterostructures;Semiconductor Science and Technology;2007-08-06
2. Two-dimensional p-n junction under equilibrium conditions;Semiconductors;2002-08
3. Quantum wires in staggered-band-line-up single heterostructures with corrugated interfaces;Physical Review B;1997-03-15
4. Far‐infrared study of a quasi‐one‐dimensional electron gas formed on (100)GaAs facets with hole gas sidegates on a (311)A GaAs substrate;Applied Physics Letters;1996-09-23
5. Design of gate‐confined quantum‐dot structures in the few‐electron regime;Journal of Applied Physics;1995-07-15
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