Far‐infrared study of a quasi‐one‐dimensional electron gas formed on (100)GaAs facets with hole gas sidegates on a (311)A GaAs substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117626
Reference9 articles.
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface potential analysis on doping superlattice by electrostatic force microscope;Applied Surface Science;2002-03
2. Fabrication of GaAs quantum wires by natural selective doping and its characterization by electrostatic force microscope;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
3. Facet preferential growth of self-assembled InAs dots on patterned GaAs substrates;Journal of Electronic Materials;1999-05
4. Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy;Journal of Crystal Growth;1999-05
5. Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4;Journal of Applied Physics;1997-08
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