Spheroid 3C inclusions in 8° off-axis 4H-SiC epilayers grown by chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2986138
Reference23 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
3. Advances in SiC materials and devices: an industrial point of view
4. The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology
5. Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide
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1. Impact of Typical SiC Epilayer Defects on the Yield and Performance of 4H-SiC JBS Diodes;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach;Journal of Applied Physics;2022-05-14
3. Recent advances in 4H-SiC epitaxy for high-voltage power devices;Materials Science in Semiconductor Processing;2018-05
4. (Invited) Non-Destructive Three-Dimensional Imaging of Extended Defects in 4H-SiC;ECS Transactions;2017-08-17
5. Silicon Carbide Epitaxy;Handbook of Crystal Growth;2015
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