Silicon Carbide Epitaxy
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Publisher
Elsevier
Reference163 articles.
1. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
2. High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers
3. 21-kV SiC BJTs With Space-Modulated Junction Termination Extension
4. Theoretical investigations for the polytypism in semiconductors
5. Role of surface effects on silicon carbide polytype stability
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1. State of the art, trends, and opportunities for oxide epitaxy;APL Materials;2024-04-01
2. State‐of‐the‐Art Electronic Materials for Thin Films in Bioelectronics;Advanced Electronic Materials;2023-07-09
3. Dislocation-related leakage-current paths of 4H silicon carbide;Frontiers in Materials;2023-01-12
4. Activation energy of subgrain growth process and morphology evolution in β-SiC/Si(111) heterostructures synthesized by pulse photon treatment method in a methane atmosphere;Journal of Materials Science: Materials in Electronics;2018-10-05
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