The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3157134
Reference20 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
3. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
4. Strain relaxation in patterned strained silicon directly on insulator structures
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