Power-Dependent Raman Analysis of Highly Strained Si Nanobridges-Reference-Cited by-同舟云学术

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Power-Dependent Raman Analysis of Highly Strained Si Nanobridges

Published:2014-02-28 Issue:3 Volume:14 Page:1249-1254
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Süess M. J.¹²³,Minamisawa R. A.²,Geiger R.²,Bourdelle K. K.⁴,Sigg H.²,Spolenak R.¹

Affiliation:

1. Laboratory for Nanometallurgy (LNM), Department of Materials Science, ETH Zurich, CH-8093 Zürich, Switzerland

2. Laboratory for Micro- and Nanotechnology (LMN), Paul Scherrer Institut, CH-5232 Villigen, Switzerland

3. Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, CH-8093 Zürich, Switzerland

4. SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France

Funder

Swiss National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl404152r

Reference56 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications

3. Analysis of enhanced light emission from highly strained germanium microbridges

4. Strain-induced band gap shrinkage in Ge grown on Si substrate

5. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

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