Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications-Reference-Cited by-同舟云学术

Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

Published:2009-06-22 Issue:25 Volume:94 Page:252901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao L. G.,Xu B.,Guo H. X.,Xia Y. D.,Yin J.,Liu Z. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3159473

Reference14 articles.

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3. Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum

4. High temperature stability of lanthanum silicate dielectric on Si (001)

5. Band offset measurements of the GaN (0001)/HfO2 interface

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