Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2gate dielectric-Reference-Cited by-同舟云学术

Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2gate dielectric

Published:2016-03-09 Issue:4S Volume:55 Page:04EG04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsu Ching-Hsiang,Shih Wang-Cheng,Lin Yueh-Chin,Hsu Heng-Tung,Hsu Hisang-Hua,Huang Yu-Xiang,Lin Tai-Wei,Wu Chia-Hsun,Wu Wen-Hao,Maa Jer-Shen,Iwai Hiroshi,Kakushima Kuniyuki,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EG04/pdf

Reference28 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. High performance and high reliability AlGaN/GaN HEMTs

3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

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