Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119859
Reference19 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
3. GaN Growth Using GaN Buffer Layer
4. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
5. Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition
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