Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/2/028101/pdf
Reference18 articles.
1. UV Light-Emitting Diodes at 340 nm Fabricated on a Bulk GaN Substrate
2. High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
3. Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire
4. Development of 230-270 nm AlGaN-based deep-UV LEDs
5. High quality AlN for deep UV photodetectors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hexagonal boron nitride pattern embedded in AlN template layer for visible-blind ultraviolet photodetectors;Optical Materials Express;2017-04-04
2. Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer;AIP Advances;2015-09
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