Band discontinuity in strained In(As,P)/InP heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121123
Reference11 articles.
1. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP
2. Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators
3. 1.3 μm InAsP compressively strained multiple‐quantum‐well lasers for high‐temperature operation
4. Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells
5. Optical property of InAsP/InP strained quantum wells grown on InP (111)Band (100) substrates
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