Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110806
Reference12 articles.
1. 5-Gb/s performance of integrated light source consisting of lambda /4-shifted DFB laser and EA modulator with SI InP BH structure
2. Multiple quantum well (MQW) waveguide modulators
3. Quaternary quantum wells for electro‐optic intensity and phase modulation at 1.3 and 1.55 μm
4. High quality InGaAsP/InP multiple quantum wells for optical modulation from 1 to 1.6 μm
5. Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy
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1. Design of micro resonator quantum well intensity modulator;Optical and Quantum Electronics;2012-04-27
2. Transistor based quantum well optical modulator and its performance in RF links;SPIE Proceedings;2010-08-19
3. Luminescence enhancement of plasma-etched InAsP∕InGaAsP quantum wells;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-03
4. Ultraviolet electroabsorption modulator based on AlGaN∕GaN multiple quantum wells;Journal of Applied Physics;2005-06-15
5. Microstructural, magnetotransport, and electronic subband studies of InAsxP1−x/InP modulation-doped strained single quantum wells;Journal of Physics and Chemistry of Solids;2002-05
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