Optical property of InAsP/InP strained quantum wells grown on InP (111)Band (100) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355920
Reference31 articles.
1. Optical properties of strained-layer superlattices with growth axis along [111]
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3. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
4. Migration‐enhanced epitaxy on a (111)Boriented GaAs substrate
5. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
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