Threshold photoemission analysis of the surface reactions of triethylgallium and trimethylgallium on GaAs(100): A promising technique for kinetics studies
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123276
Reference15 articles.
1. Photoemission oscillations during epitaxial growth
2. Measurement of photoemission oscillations during molecular beam epitaxial growth of (001) GaAs, AlAs, AlGaAs, InAs, and AlSb
3. Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface
4. Simulation of photoemission current to monitor the thin film growth
5. A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
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