Simulation of photoemission current to monitor the thin film growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Photoemission oscillations during epitaxial growth
3. Observation of photoelectron oscillations during growth of GaAs
4. Photoemission applied to thein situ study of epitaxial growth: Theoretical modelling
5. Atomic scale simulation of crystal growth applied to the calculation of the photoemission current
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1. Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study;Journal of Materials Science;2011-10-20
2. In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface;Defect and Diffusion Forum;2011-04
3. Effect of As2 physisorbed molecules on the photoemission current during growth: simulation of GaAs and GaAlAs deposition;Materials Science and Engineering: B;2003-08
4. Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
5. Threshold photoemission analysis of the surface reactions of triethylgallium and trimethylgallium on GaAs(100): A promising technique for kinetics studies;Applied Physics Letters;1999-01-11
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