Measurement of photoemission oscillations during molecular beam epitaxial growth of (001) GaAs, AlAs, AlGaAs, InAs, and AlSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113785
Reference13 articles.
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Monte Carlo investigation of growth and characterization of heteroepitaxial thin films;Thin Solid Films;2009-10
2. Monte Carlo growth and in situ characterisation for AlxGa1−xAs heteroepitaxy;Computational Materials Science;2005-04
3. Self-organized growth on GaAs surfaces;Materials Science and Engineering: R: Reports;2004-12
4. Effect of As2 physisorbed molecules on the photoemission current during growth: simulation of GaAs and GaAlAs deposition;Materials Science and Engineering: B;2003-08
5. Measurement of V/III ratio using threshold photoemission;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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