Thermally stable low resistance ohmic contacts ton‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104782
Reference4 articles.
1. Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method
2. Development of ohmic contact materials for GaAs integrated circuits
3. Stresses, microstructure and resistivity of thin tungsten films deposited by RF magnetron sputtering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contacts for GaAs devices;High Temperature Electronics;1997
2. Phase equilibria in the InNiAs system at 600°C;Materials Science and Engineering: B;1996-07
3. Phase equilibria in the Ga- In- Ni system at 600 °C;Journal of Phase Equilibria;1995-12
4. Highly stable sputtered NiInW refractory ohmic contact ton‐type GaAs;Journal of Applied Physics;1992-10-15
5. Pt3In7 Ohmic Contacts to n-TYPE GaAs;MRS Proceedings;1992
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