1. Crozat, P. et al. (1992) Cryogenic behaviour of ultrashort gate AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs HEMTs, in Microelectronic Engineering 19. Proceedings of ESSDERC 92, Leuven, Belgium, September 14–17, Elsevier, pp. 861–864.
2. Kraemer, B., Basset, R., Chye, P., Day, D. and Wei, J. (1994) Power PHEMT module delivers 12 watts, 40% PAE over the 8.5 to 10.5 GHz band, in Proc. IEEE MTT-S Symposium, San Diego CA, 23–27 May, pp. 683–686.
3. Hartnagel, H.L. (1995) III-V semiconductor properties for high temperature electronics. Materials Science and Engineering B, 29(1–3), 47–53.
4. Papanicolaou, N.A., Anderson, W.T., Katzer, D.S., Jones, S.H. and Jones, J.R. (1994) All-refractory GaAs FET for high temperature applications, in Proc. 2nd Int. High Temperature Electronics Conference, Charlotte NC, 5–10 June, pp. V9–V14.
5. Baier, S., Nohava, J., Jeter, R., Carlson, R. and Hanka, S. (1994) High temperature electronics using complementary heterostructure FET (CHFET) technology, in Proc. 2nd Int. High Temperature Electronics Conference, Charlotte NC, 5–10 June, pp. V21–V26.