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III–V semiconductor properties for high temperature electronics

  • Published:1995-01 Issue:1-3 Volume:29 Page:47-53
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Hartnagel Hans L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. M. Neuberger III–V Semiconducting Compounds, Handbook of Electronic Materials, Vol. 2, IFI-Plenum, New York.

2. Technology and performance of a high temperature stable (up to 300 °C) operational amplifier on GaAs;Böttner,1991

3. Non alloyed, high temperature stable ohmic contacts to GaAs based on LaB6 diffusion barriers;Würfl,1990

4. A new GaAs technology for stable FETs at 300 degrees C

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1. Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications;2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2020-11-16

2. Thermal reaction of Pt film with 〈110〉 GaN epilayer;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-09

3. Wide bandgap semiconductor materials for high temperature electronics;Thin Solid Films;1999-04

4. Temperature dependence of conductivity and Hall carrier concentration of polycrystalline SiC deposited on fused silica by laser ablation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01

5. Contacts for GaAs devices;High Temperature Electronics;1997
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