Preparation and atomic structure of reconstructed (0001) InGaN surfaces
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4743000
Reference25 articles.
1. Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction
2. Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures
3. Observation of a (√3×√3)-R30° reconstruction on GaN(0001) by RHEED and LEED
4. Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate
5. PAMBE growth and in-situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films
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1. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition;Applied Physics Express;2020-05-15
2. Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells;Materials & Design;2020-05
3. Self-Limited In Incorporation in (In,Ga)N/GaN Short-Period Superlattices;Nanoscience and Nanotechnology Letters;2017-07-01
4. In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices;Applied Physics Letters;2017-02-13
5. Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells;Materials Science in Semiconductor Processing;2016-11
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