Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells-Reference-Cited by-同舟云学术

Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Published:2016-11 Issue: Volume:55 Page:7-11
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Alamé Sabine,Quezada Andrea Navarro,Skuridina Daria,Reich Christoph,Henning Dimitri,Frentrup Martin,Wernicke Tim,Koslow Ingrid,Kneissl Michael,Esser Norbert,Vogt Patrick

Funder

Ministerium für Innovation, Wissenschaft und Forschung des Landes Nordrhein-Westfalen

Senatsverwaltung für Wirtschaft, Technologie und Forschung des Landes Berlin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides

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5. Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non-Radiative Energy Transfer

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