PAMBE growth and in-situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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2. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition;Applied Physics Express;2020-05-15
3. Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In2O3;ACS Applied Materials & Interfaces;2019-07-04
4. Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures;Journal of Applied Physics;2018-05-21
5. In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices;Applied Physics Letters;2017-02-13
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