Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363721
Reference17 articles.
1. Thin epitaxial gallium aluminum arsenide layers grown by multi-compartment liquid-phase epitaxy
2. A Study of Impurities and Traps in Liquid Phase Epitaxial InP in Relation to Melt Prebaking
3. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
4. LPE growth of high purity InP and In1−xGaxP1−yAsy
5. Growth and photoluminescence spectra of high‐purity liquid phase epitaxial In0.53Ga0.47As
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