InGaAs Nanoflowers Grown by MOCVD-Reference-Cited by-同舟云学术

InGaAs Nanoflowers Grown by MOCVD

Published:2012-08 Issue: Volume:560-561 Page:747-750
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Zhang Tie Min¹,Miao Guo Qing²,Fu Jun¹,Ban Dong Mei¹,Shen Zhen Jiang¹,Lin Hong¹,Zou Xu¹,Peng Hong Yan¹

Affiliation:

1. Hainan Normal University

2. Chinese Academy of Sciences

Abstract

InGaAs nanoflowers have been prepared on InP substrates by MOCVD, using TMIn, TMGa and AsH3 as reactive precursors at 420 oC. Through observation by scanning electron microscopy, we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared, when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.560-561.747.pdf

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