Response Spectrum 0.9-2.65 μm of In0.82Ga0.18As Detectors by Two-Step Growth Technique

Abstract

InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn, TMGa, AsH3, and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power, their temperatures were detected by a thermocouple, and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm, In0.82Ga0.18As absorption layer with the thickness of 2.8 μm, and the InP cap with the thickness of 0.8 μm. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied, the curves of the I-V characteristics, the range of response spectrum, and the detectivity (D*) were obtained.