Growth and photoluminescence spectra of high‐purity liquid phase epitaxial In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332784
Reference29 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications
3. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
4. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
5. LPE growth of high purity InP and In1−xGaxP1−yAsy
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