Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1825619
Reference15 articles.
1. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
2. Photoluminescence spectroscopy of erbium implanted gallium nitride
3. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
4. Electroluminescent properties of erbium-doped III–N light-emitting diodes
5. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
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