Electroluminescent properties of erbium-doped III–N light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1647271
Reference15 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities
3. Erbium in oxygen‐doped silicon: Electroluminescence
4. Photoluminescence spectroscopy of erbium implanted gallium nitride
5. Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC
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