Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars-Reference-Cited by-同舟云学术

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

Published:2022-09-15 Issue: Volume: Page:
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Author:

Sato Shin-ichiro¹,Li Shuo²,Greentree Andrew²,Deki Manato³,Nishimura Tomoaki⁴,Watanabe Hirotaka³,Nitta Shugo³,Honda Yoshio³,Amano Hiroshi³,Gibson Brant²,Ohshima Takeshi¹

Affiliation:

1. National Institutes for Quantum Science and Technology

2. RMIT University

3. Nagoya University

4. Hosei University

Abstract

Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.

Publisher

Research Square Platform LLC

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