H2S‐treated GaP(001) surface studied by low‐energy electron diffraction, Auger electron spectroscopy, and x‐ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107740
Reference20 articles.
1. Effects of H2S adsorption on surface properties of GaAs {100} grown in situ by MBE
2. InP MIS transistors with grown-in sulphur dielectric
3. Influence of S and Se on the Schottky-barrier height and interface chemistry of Au contacts to GaAs
4. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
5. Sulfur as a surface passivation for InP
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