First principle research on Ga rich GaAs0.5P0.5(001) β2(4 × 2) and As(P) rich β2(2 × 4) reconstruction surfaces with and without Cs adsorption-Reference-Cited by-同舟云学术

First principle research on Ga rich GaAs0.5P0.5(001) β2(4 × 2) and As(P) rich β2(2 × 4) reconstruction surfaces with and without Cs adsorption

Published:2021-08-14 Issue:9 Volume:53 Page:
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

He Siyi,Yang Mingzhu^ORCID,Pei Shixin

Funder

nuist students' platform for innovation and entrepreneurship training program

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11082-021-03159-5.pdf

Reference29 articles.

1. Edgecumbe, J.P.: GaAsP photocathode with 40% QE at 550 nm. SPIE 1655, 204–210 (1992)

2. Frisch, A.M.: (2×4) GaP(001) surface: Atomic structure and optical anisotropy. Phys. Rev. B 60, 2488–2494 (1999)

3. Fukuda, Y.: H2S treated GaP(001) surface studied by low energy electron diffraction, Auger electron spectroscopy, and x ray photoelectron spectroscopy. Appl. Phys. Lett. 61, 955 (1992)

4. Gangcheng, J.: Comparison of blue–green response between transmission-mode GaAsP- and GaAs-based photocathodes grown by molecular beam epitaxy. Chin. Phys. B. 25(4), 048505 (2016)

5. Intevac: GaAsP Photo-cathode process improvement. SBIR America's Seed Fund. https://www.sbir.gov/sbirsearch/detail/201796 (2021). Accessed 20 July 2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring optoelectronic properties of C-doped GaAs for photocathode application from first-principles calculation;AIP Advances;2022-01-01