(2×4)GaP(001) surface: Atomic structure and optical anisotropy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.2488/fulltext
Reference51 articles.
1. Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces
2. Spectroscopic evidence for reduction of unoccupied states in the band gap of GaP(001) by H2S passivation
3. Clean GaP(001)‐(4×2) and H2S‐treated (1×2)S surface structures studied by scanning tunneling microscopy
4. Hydrogen-induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy
5. A Clean GaP(001)4×2/c(8×2) Surface Structure Studied by Scanning Tunneling Microscopy and Ion Scattering Spectroscopy
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