Hydrogen-induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy
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Published:1996-11
Issue:6
Volume:14
Page:3599
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
6 articles.
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1. Coexistence of domains: other III–V compounds and II–VI compounds (AlSb, GaP, GaSb, InAs, InP, InSb, CdTe);Physics of Solid Surfaces;2018
2. Structure of domain boundaries: other III–V compounds: GaP, GaSb, InAs, InP, InSb;Physics of Solid Surfaces;2018
3. Heteropolar cubic semiconductors: low-index surfaces of zinc blend compound semiconductors;Physics of Solid Surfaces;2018
4. III-V compound semiconductor (001) surfaces;Applied Physics A: Materials Science & Processing;2002-07-01
5. (2×4)GaP(001) surface: Atomic structure and optical anisotropy;Physical Review B;1999-07-15