Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses-Reference-Cited by-同舟云学术

Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

Published:2015-08-10 Issue:6 Volume:107 Page:063501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

He Yunlong¹,Li Peixian²,Wang Chong¹,Li Xiangdong¹,Zhao Shenglei¹,Mi Minhan¹,Pei Jiuqing¹,Zhang Jincheng¹,Ma Xiaohua¹²,Hao Yue¹

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928477

Reference24 articles.

1. Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

2. Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

3. High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

4. AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

5. AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

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