Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations-Reference-Cited by-同舟云学术

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Published:2014-09-14 Issue:10 Volume:116 Page:104501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ťapajna M.¹,Jurkovič M.¹,Válik L.¹,Haščík Š.¹,Gregušová D.¹,Brunner F.²,Cho E.-M.²,Hashizume T.³,Kuzmík J.¹

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia

2. Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany

3. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo, Japan

Funder

EC | FP7-ICT

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894703

Reference35 articles.

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2. Y. Uemoto , T. Morita , A. Ikoshi , H. Umeda , H. Matsuo , J. Shimizu , M. Hikita , M. Yanagihara , T. Ueda , T. Tanaka , and D. Ueda , inProceedings of IEEE International Electron Devices Meeting (IEDM), December 2009, pp. 1–4.

3. N. Ikeda , S. Kaya , J. Li , T. Kokawa , M. Masuda , and S. Katoh , inProceedings of 21st IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), June 2009, pp. 251–254.

4. High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators

5. GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

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