Affiliation:
1. State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University , Xi'an 710071, China
Abstract
This Letter reports two kinds of oxygen-containing plasma treated β-Ga2O3 Schottky barrier diodes (SBDs), including N2O plasma treatment and O2 plasma treatment, and the SBD without plasma is prepared for comparison. I–V characteristics, breakdown characteristics, and trap state characteristics of three devices have been studied. It is found that the turn-on voltage of SBDs with N2O plasma can reduce to 0.6 V, and the better current density of 750 A/cm2 and an on-resistance of 3.5 mΩ cm2 are obtained after the N2O plasma treatment. Moreover, the breakdown voltage of SBDs with N2O plasma is 50.2% higher than the conventional one, whose value reaches 323 V. In addition, the trap states' characteristics of the devices are studied, which show that the oxygen-containing plasma can reduce the deep level trap states density partly in the anode region, which can improve the surface quality effectively.
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Fundamental Research Funds for the Central Universities
Subject
Physics and Astronomy (miscellaneous)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Research on the β-Ga2O3 Power Diodes with N2O Plasma Pretreatment;2023 IEEE PELS Students and Young Professionals Symposium (SYPS);2023-08-27