Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images-Reference-Cited by-同舟云学术

Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images

Published:2019-04-29 Issue:17 Volume:114 Page:172103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kondo Y.¹^ORCID,Aoyama Y.¹,Hashiguchi H.¹,Lin C. C.²,Hsu K.²,Endo N.¹,Asayama K.¹,Fukunaga K-I.¹

Affiliation:

1. EM Business Unit, JEOL, Ltd., 3-1-2 Musashino Akishima, 196-8558 Tokyo, Japan

2. Material Analysis Division, IST, Inc., No. 10-1 Lixing 1st Rd., 30078 Hsinchu, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5084161

Reference24 articles.

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2. High-mobility strained-Si PMOSFET's

3. High-mobility Si and Ge structures

4. K. Rim , S. Koester , M. Hargrove , J. Chu , P. M. Mooney , J. Ott , T. Kanarsky , P. Ronsheim , M. Ieong , A. Grill , and H.S. P. Wong , in Digest of Technical Papers of 2001 Symposium on VLSI Technology (Japan Applied Physics Society/IEEE, 2001), p. 59.

5. Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy

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